Temperature dependent dielectric function and direct bandgap of Ge
نویسندگان
چکیده
منابع مشابه
Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes Citation
Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes," Opt. The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters.
متن کاملRoom-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes.
We report what we believe to be the first demonstration of direct bandgap electroluminescence (EL) from Ge/Si heterojunction light-emitting diodes (LEDs) at room temperature. In-plane biaxial tensile strain is used to engineer the band structure of Ge to enhance the direct gap luminescence efficiency by increasing the injected electron population in the direct Gamma valley. Room-temperature EL ...
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ژورنال
عنوان ژورنال: Journal of Vacuum Science & Technology B
سال: 2020
ISSN: 2166-2746,2166-2754
DOI: 10.1116/1.5129685